BUK9524-55A,127 datasheet

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О ДАТАШИТЕ

• Маркировка
  BUK9524-55A,127
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9524-55A,127 Configuration: Single Continuous Drain Current: 46 A Current - Continuous Drain (id) @ 25?° C: 46A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V Input Capacitance (ciss) @ Vds: 1815pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 105W Power Dissipation: 105 W Rds On (max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0217 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Rds On: 21.7 mOhms Brand: NXP Semiconductors Fall Time: 80 ns Rise Time: 104 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 82.5 ns Part # Aliases: BUK9524-55A Other Names: 934056281127, BUK9524-55A
• Количество страниц
  14 шт.
• Форматы файла
  HTML, PDF

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